Total Ionization Dose Effect Studies of a 0.25 μm Silicon-On-Sapphire CMOS Technology
نویسندگان
چکیده
Wickham Chen, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1402. Fax: 214-768-3573. Email: [email protected] Cheng-An Yang, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1641. Fax: 214-768-4095. Email: [email protected] Junheng Zhang, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1402. Fax: 214-768-3573. Email: [email protected] Peiqing Zhu, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1402. Fax: 214-768-3573. Email: [email protected] Annie Chu Xiang, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1472. Fax: 214-768-4095. Email: [email protected] Ryszard Stroynowski, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-4076. Fax: 214-768-4095. Email: [email protected]
منابع مشابه
Total Ionization Dose Effects and Single-Event Effects Studies of a 0.25 μm Silicon-On-Sapphire CMOS Technology
Silicon-on-Sapphire (SOS) CMOS is an attractive technology for radiation-tolerant circuits design. It eliminates single-event latch-up and has a smaller sensitive volume for single-event upsets (SEUs) and single-event transients (SETs) compared to Bulk CMOS technology [1, 2]. However, like any Silicon-On-Insulator technology, SOS technology has back-channel leakage as part of the total ionizati...
متن کاملResponse of a 0.25 μm thin-film silicon-on-sapphire CMOS technology to total ionizing dose
The radiation response of a 0.25 μm silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. The threshold-voltage shift is less than 170 mV and the leakage-current increase is less than 1 nA for individual standard-layout nMOSFET and pMOSFET devices at a total dose of 100 krad(SiO2). The increase in power sup...
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Wickham Chen, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1402. Fax: 214-768-3573. Email: [email protected] Tiankuan Liu, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1541. Fax: 214-768-4095. Email: [email protected] Ping Gui, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1733. Fax: 214-768-3573. Email: [email protected] Annie C...
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Voltage Control Oscillator (VCO) is one of the most sensitive components in Phase-locked loops (PLLs). This paper presents the design, analysis and total ionization dose (TID) measurement results of a 3GHz VCO designed and implemented using a commercial 0.25μm Silicon-on-Sapphire (SOS) CMOS process. First, we present the TID effects on single NMOS and PMOS transistors made in a test chip using ...
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